Datasheet Panasonic MA2J111 — 数据表

This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA2J1110G
Silicon epitaxial planar type
For switching circuits
■ Package • Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
• High breakdown voltage: VR = 80 V • Code
SMini2-F3
• Pin Name
1: Anode
2: Cathode di
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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA2J111 (MA111)
Silicon epitaxial planar type
For switching circuits Unit: mm
1.25±0.1 0.7±0.1
0.35±0.1 M
Di ain
sc te
on na
tin nc
ue e/
d ■ Features • Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
• High breakdown voltage: VR = 80 V 1 VR Maximum peak reverse voltage VRM Forward current IF Peak forward current IFM Non-repetitive peak forward
surge current * IFSM Junction temperature Tj Storage temperature Tstg Note) *: t = 1 s Rating Unit 80 V 80 V 100 mA 225 mA 500 mA 150 °C −55 to +150 °C 2.5±0.2 1.7±0.1
0.4±0.1
(0.15) Reverse voltage 0.16+0.1
-0.06 5˚ 0 to 0.1 Symbol 5˚ di
p
Pl
lan nclu
ea
e …