Datasheet MA2J1110G (Panasonic)

This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA2J1110G
Silicon epitaxial planar type
For switching circuits
■ Package • Allowing high-density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
• High breakdown voltage: VR = 80 V • Code
SMini2-F3
• Pin Name
1: Anode
2: Cathode di
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d ■ Features ■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Reverse voltage VR Maximum peak reverse voltage
Forward current VRM
IF Peak forward current IFM Non-repetitive peak forward
surge current * IFSM Junction temperature Tj Storage temperature Tstg Note) *: t = 1 s Rating Unit 80 V 80 V 100 mA 225 mA 500 mA 150 °C −55 to +150 °C ■ Marking Symbol: 1B ue ■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol ce
/D
isc
on
tin Parameter Forward voltage VF Reverse voltage VR Reverse current IR an Terminal capacitance int en Reverse recovery time * Ct
trr Conditions Min IF = 100 mA
IR = 100 µA Typ Max Unit 0.95 1.20 V 100 nA 1.2 pF 3 ns 80 V VR = 75 V VR = 0 V, f = 1 MHz 0.6 IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω Ma Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU) Input Pulse
tp tr
10% A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω Publication date: November 2007 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05 Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω SKF00091AED Output Pulse t
IF trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω 1