Datasheet Inchange Semiconductor FDD86110 — 数据表

isc N-Channel MOSFET Transistor FDD86110 FEATURES Drain Current : ID= 50A@ TC=25℃ Drain Source Voltage
: VDSS= 100V(Min) Static Drain-Source On-Resistance
: RDS(on) = 10.2mΩ(Max) 100% avalanche tested Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 127 W TJ Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.98 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FDD86110 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)DSS PARAMETER CONDITIONS MIN MAX UNIT 100 -V Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 10V; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 12.5A -10.2 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -±0.1 uA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS= 0 -1.0 uA VSD Forward On-Voltage IS= 12.5A; VGS= 0 -1.3 V NOTICE：
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incidental damages. isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark …