Datasheet Nexperia PMV65UNEAR — 数据表

PMV65UNEA 20 V, N-channel Trench MOSFET
17 March 2017 Product data sheet 1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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• Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 940 mW
ElectroStatic Discharge (ESD) protection > 2KV HBM
AEC-Q101 qualified 3. Applications
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• LED driver
Power management
Low-side loadswitch
Switching circuits 4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -20 V VGS gate-source voltage Tj = 25 °C; Tamb = 25 °C -8 -8 V ID drain current VGS = 4.5 V; Tamb = 25 °C -2.8 A -63 73 mΩ [1] Static characteristics
RDSon …