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40 V, N-channel Trench MOSFET
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PMV65ENEA 40 V, N-channel Trench MOSFET
28 April 2016 Product data sheet 1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology. 2. Features and benefits
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• Logic-level compatible
Very fast switching
Trench MOSFET technology
Electrostatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified 3. Applications
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• Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits 4. Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -40 V VGS gate-source voltage -20 -20 V ID drain current -2.7 A -64 75 mΩ VGS = 10 V; Tamb = 25 °C [1] Static characteristics
RDSon drain-source on-state …
