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20 V, P-channel Trench MOSFET
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PMV65XPE 20 V, P-channel Trench MOSFET
25 April 2014 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology. 2. Features and benefits
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•
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• Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 890 mW
ElectroStatic Discharge (ESD) protection 2 kV HBM 3. Applications
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• Relay driver
High speed line driver
High-side loadswitch
Switching circuits 4. Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -20 V VGS gate-source voltage -12 -12 V ID drain current -3.3 A -67 78 mΩ VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics
RDSon drain-source on-state
resistance
[1] VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for …
