RJU003N03FRA
Nch 30V 300mA Small Signal MOSFET Datasheet
AEC-Q101 Qualified l Outline VDSS 30V SOT-323 RDS(on)(Max.) 1.1Ω SC-70 ID ±300mA UMT3 PD 200mW l Features
1) Very fast switching
2) Ultra low voltage drive (2.5V drive)
3) AEC-Q101 Qualified l Inner circuit l Application l Packaging specifications Switching Embossed
Tape Packing Type Reel size (mm) 180 Tape width (mm) 8 Quantity (pcs) 3000 Taping code T106 Marking LP l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol
VDSS Value Unit 30 V ID ±300 mA Pulsed drain current IDP*1 ±1.2 A Gate -Source voltage VGSS ±12 V Power dissipation PD*2 200 mW Tj 150 ℃ Tstg -55 to +150 ℃ Drain -Source voltage
Continuous drain current Junction temperature
Operating junction and storage temperature range www.rohm.com
© 2022 ROHM Co., Ltd. All rights reserved. 1/10 20221215 -Rev.002 RJU003N03FRA Datasheet l Thermal resistance Parameter Symbol
RthJA*2 Thermal resistance, junction -ambient Values
Min. Typ. Max. -625 Unit
℃/W l Electrical characteristics (T a = 25°C) Parameter Symbol Drain -Source breakdown
voltage
Breakdown voltage
temperature coefficient Conditions V(BR)DSS VGS = 0V, ID = 1mA
ΔV(BR)DSS ID = 1mA Values Unit Min. Typ. Max. 30 -V -35.0 -mV/℃ ΔTj referenced to 25℃ Zero gate voltage
drain current IDSS VDS = 30V, VGS = 0V -1 μA Gate -Source leakage current IGSS VGS = ±12V, VDS = 0V -±10 μA Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.8 -1.5 V Gate threshold voltage
temperature coefficient ΔVGS(th) -2.04 -mV/℃ -0.8 1.1 -0.9 1.3 VGS = 2.5V, ID = 300mA -1.4 1.9 VDS = 10V, ID = 300mA 400 -ΔTj ID = 1mA
referenced to 25℃
VGS = 4.5V, ID = 300mA Static drain -source
on -state resistance …
