Datasheet Diodes DMTH4008LFDFWQ — 数据表
| 制造商 | Diodes |
| 系列 | DMTH4008LFDFWQ |
40V +175°C N沟道增强型MOSFET
数据表
Datasheet DMTH4008LFDFWQ
PDF, 484 Kb, 语言: en, 文件上传: Sep 9, 2025, 页数: 8
40V +175?C N-Channel Enhancement Mode MOSFET
40V +175?C N-Channel Enhancement Mode MOSFET
从文件中提取
详细说明
这款 MOSFET 专为满足汽车应用的严格要求而设计。它符合 AEC-Q101 标准，并有 PPAP 支持，非常适合用于：电源管理功能、DC-DC 转换器和背光。
参数化
| Parameters / Models | DMTH4008LFDFWQ-13 | DMTH4008LFDFWQ-13R | DMTH4008LFDFWQ-13R-A | DMTH4008LFDFWQ-7 | DMTH4008LFDFWQ-7R | DMTH4008LFDFWQ-7R-A |
|---|---|---|---|---|---|---|
| AEC Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| CISS Condition @|VDS| (V) | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| CISS Typ (pF) | 1030 pF | 1030 pF | 1030 pF | 1030 pF | 1030 pF | 1030 pF |
| Compliance (Only Automotive Supports PPAP) | Automotive | Automotive | Automotive | Automotive | Automotive | Automotive |
| ESD Diodes (Y|N) | No | No | No | No | No | No |
| PD @TA = +25°C (W) | 2.35 W | 2.35 W | 2.35 W | 2.35 W | 2.35 W | 2.35 W |
| Polarity | N | N | N | N | N | N |
| QG Typ @ |VGS| = 10V (nC) | 14.2 nC | 14.2 nC | 14.2 nC | 14.2 nC | 14.2 nC | 14.2 nC |
| QG Typ @ |VGS| = 4.5V (nC) | 6.8 nC | 6.8 nC | 6.8 nC | 6.8 nC | 6.8 nC | 6.8 nC |
| RDS(ON)Max@ VGS(10V) (mΩ) | 11.5 mΩ | 11.5 mΩ | 11.5 mΩ | 11.5 mΩ | 11.5 mΩ | 11.5 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 18 mΩ | 18 mΩ | 18 mΩ | 18 mΩ | 18 mΩ | 18 mΩ |
| |IDS| @TA = +25°C (A) | 11.6 A | 11.6 A | 11.6 A | 11.6 A | 11.6 A | 11.6 A |
| |VDS| (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| |VGS(TH)| Max (V) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| |VGS(TH)| Min (V) | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
| |VGS| (±V) | 20 ±V | 20 ±V | 20 ±V | 20 ±V | 20 ±V | 20 ±V |
模型线
系列: DMTH4008LFDFWQ (6)
制造商分类
- Discrete Semiconductors > MOSFETs > DMTH4008LFDFWQ