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40V Complementary Enhancement Mode MOSFET H-Bridge
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DMHC4035LSDQ
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Device BVDSS N-Channel 40V P-Channel -40V Features
RDS(ON) Max ID Max
TA = +25°C 45mΩ @ VGS = 10V 4.5A 58mΩ @ VGS = 4.5V 4A 65mΩ @ VGS = -10V -3.7A 100mΩ @ VGS = -4.5V -2.9A Description and Applications Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate) P2G N2D/P2D P1G SO-8 2 x N + 2 x P Channels in An SO-8 Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4) Mechanical Data This new generation complementary MOSFET H-Bridge features
2N and 2 P channels in an SO-8 package. Qualified to AEC-Q101
the H bridge is ideally suited to driving : Solenoids DC Motors Audio Outputs P1S/P2S NEW PRODUCT
INFORMATION
ADVANCE
NEW PRODUCT Product Summary H-Bridge N2G N1S/N2S N1D/P1D N1G Top View …
