Datasheet Nexperia PSMN9R0-30YL,115 — 数据表

LF
PA
K PSMN9R0-30YL
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK
Rev. 04 — 9 March 2011 Product data sheet 1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for logic level gate drive
sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C -30 V ID drain current Tmb = 25 °C; VGS = 10 V;
see Figure 1; see Figure 3 -61 A Ptot total power
dissipation Tmb = 25 °C; see Figure 2 -46 W Tj junction temperature -55 -175 °C VGS = 10 V; ID = 15 A;
Tj = 25 °C -6.16 8 mΩ Static characteristics
RDSon drain-source on-state
resistance Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14;
see Figure 15 -2.4 -nC QG(tot) total gate charge VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14 -8.7 -nC VGS = 10 V; Tj(init) = 25 °C;
ID = 55 A; Vsup ≤ 30 V;
RGS = 50 Ω; unclamped -16 mJ Avalanche ruggedness …