Datasheet GT50J102 - Toshiba IGBT, 600 V, TO-3P(LH) — 数据表

Toshiba GT50J102

Part Number: GT50J102

详细说明

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(LH)

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Docket:
GT50J102
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT50J102
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
l The 3rd.

Generation. l Enhancement-Mode. l High Speed. l Low Saturation Voltage. : tf = 0.30µs (Max.) : VCE(sat) = 2.7V (Max.) Unit: mm

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 50 A
  • Collector Emitter Voltage Vces: 2.7 V
  • Power Dissipation Max: 200 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-3P (LH)
  • Current Ic Continuous a Max: 50 A
  • Fall Time Typ: 150 ns
  • Package / Case: TO-3P (LH)
  • Power Dissipation: 200 W
  • Power Dissipation Pd: 200 W
  • Pulsed Current Icm: 100 A
  • Rise Time: 120 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5