CLP24H4S30P
RF power GaN-SiC HEMT
Rev. 1 — 23 July 2024 Product data sheet 1. Product profile
1.1 General description
30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power
and efficiency for applications in cooking, industrial, scientific and medical at frequencies
from 2400 MHz to 2500 MHz.
The CLP24H4S30P is designed for driving high-power CW transistors and is assembled
in a high performance DFN package.
Table 1.
Application performance
Typical RF performance in a class-AB application circuit, unless otherwise specified.
Test signal
CW f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) 2400 to 2500 20 50 25 17 75 1.2 Features and benefits High efficiency
Ultra-small external matching circuit
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally input matched
For RoHS compliance see the product details on the Ampleon website 1.3 Applications RF power amplifier for CW applications in the 2400 MHz to 2500 MHz frequency range
such as commercial and consumer cooking; industrial, scientific and medical
applications CLP24H4S30P
RF power GaN-SiC HEMT 2. Pinning information
2.1 Pinning
pin 1 …
