CLF24H4LS300P
RF power GaN-SiC HEMT
Rev. 1 — 30 July 2024 Product data sheet 1. Product profile
1.1 General description
300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power
and efficiency for applications in cooking, industrial, scientific and medical at frequencies
from 2400 MHz to 2500 MHz.
The CLF24H4LS300P is designed for high-power CW applications and is assembled in a
high performance ceramic package.
Table 1.
Application performance
RF performance at VDS = 50 V; VGS = 5 V; Tamb = 25 C in a class-AB/class-C application circuit.
Test signal
CW
CW pulsed
[1] [1] f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2400 to 2500 50 320 14 74 2400 to 2500 50 350 14 75 tp = 100 s; = 10 % 1.2 Features and benefits High efficiency
Excellent ruggedness under CW and CW pulsed conditions
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally input matched
For RoHS compliance see the product details on the Ampleon website 1.3 Applications RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as commercial and consumer cooking, industrial, scientific and medical
applications CLF24H4LS300P
RF power GaN-SiC HEMT 2. Pinning information …
