Datasheet IXGR32N170AH1 - IXYS IGBT, ISOPLUS247 — 数据表

IXYS IXGR32N170AH1

Part Number: IXGR32N170AH1

详细说明

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
Advance Technical Information
High Voltage IGBT with Diode
Electrically Isolated Tab
IXGR 32N170AH1
VCES IC25 VCE(sat) tfi(typ)

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 26 A
  • Collector Emitter Voltage Vces: 5.2 V
  • Power Dissipation Max: 200 W
  • Collector Emitter Voltage V(br)ceo: 1.7kV
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: ISOPLUS-247
  • Current Ic Continuous a Max: 26 A
  • Fall Time tf: 50 ns
  • Junction to Case Thermal Resistance A: 0.65°C/W
  • Package / Case: ISOPLUS-247
  • Pin Configuration: Copack (FRD)
  • Power Dissipation: 200 W
  • Rise Time: 50 ns
  • Termination Type: Through Hole
  • Transistor Polarity: NPN
  • Voltage Vces: 1700 V

RoHS: Yes