Datasheet Inchange Semiconductor IRF250 — 数据表

isc N-Channel MOSFET Transistor IRF250 DESCRIPTION Drain Current –ID=30A@ TC=25℃ Drain Source Voltage-VDSS= 200V(Min) Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max) 100% avalanche tested Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS Switching power supplies Switching converters,motor driver,relay driver ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 30 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature 150 ℃ -55~150 ℃ ID
Ptot
Tj
Tstg Storage Temperature Range THERMAL CHARACTERISTICS
SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 0.83 ℃/W 30 ℃/W 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRF250 ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT 200 -V V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 -4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A -0.085 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 -±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 -250 uA VSD Diode Forward Voltage IS=30A; VGS=0 -2.0 V NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
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incidental damages. isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark …