Datasheet IXGA30N60C3C1 - IXYS IGBT,600V,30A,TO-263 — 数据表

IXYS IXGA30N60C3C1

Part Number: IXGA30N60C3C1

详细说明

Manufacturer: IXYS

Description: IGBT,600V,30A,TO-263

data sheetDownload Data Sheet

Docket:
Preliminary Technical Information
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = =

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 60 A
  • Collector Emitter Voltage Vces: 3 V
  • Power Dissipation Max: 220 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-263
  • Number of Pins: 3

RoHS: Yes