Datasheet STGB3NB60SDT4 - STMicroelectronics IGBT, SMD, 600 V, 3 A, D2-PAK — 数据表

STMicroelectronics STGB3NB60SDT4

Part Number: STGB3NB60SDT4

详细说明

Manufacturer: STMicroelectronics

Description: IGBT, SMD, 600 V, 3 A, D2-PAK

data sheetDownload Data Sheet

Docket:
STGB3NB60SD
N-CHANNEL 3A - 600V D2PAK Power MESHTM IGBT
TYPE STGB3NB60SD
s
VCES 600 V

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 6 A
  • Collector Emitter Voltage Vces: 1.5 V
  • Power Dissipation Max: 70 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -60°C to +175°C
  • Transistor Case Style: D2-PAK
  • Number of Pins: 3
  • Current Ic Continuous a Max: 6 A
  • Fall Time tf: 720 ns
  • Package / Case: D2-PAK
  • Power Dissipation: 70 W
  • Pulsed Current Icm: 25 A
  • Rise Time: 150 ns
  • Termination Type: SMD
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5
  • Fischer Elektronik - WLPG 02