Datasheet NGD15N41CLT4G - ON Semiconductor IGBT, N CH, 15 A, 410 V, DPAK — 数据表

ON Semiconductor NGD15N41CLT4G

Part Number: NGD15N41CLT4G

详细说明

Manufacturer: ON Semiconductor

Description: IGBT, N CH, 15 A, 410 V, DPAK

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Docket:
NGD15N41CL, NGB15N41CL, NGP15N41CL
Preferred Device
Ignition IGBT 15 Amps, 410 Volts
N-Channel DPAK, D2PAK and TO-220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 410 V
  • Collector Emitter Voltage Vces: 410 V
  • DC Collector Current: 15 A
  • Number of Pins: 3
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Max: 107 W
  • SVHC: No SVHC (20-Jun-2011)
  • Transistor Case Style: D-PAK
  • Transistor Type: IGBT

RoHS: Yes