Datasheet SKW25N120 - Infineon IGBT, FAST — 数据表

Infineon SKW25N120

Part Number: SKW25N120

详细说明

Manufacturer: Infineon

Description: IGBT, FAST

data sheetDownload Data Sheet

Docket:
SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
· 40lower Eoff compared to previous generation · Short circuit withstand time ­ 10 µs · Designed for: - Motor controls - Inverter G - SMPS · NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability · Pb-free lead plating; RoHS compliant 1 · Qualified according to JEDEC for target applications · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 46 A
  • Collector Emitter Voltage Vces: 3.6 V
  • Power Dissipation Max: 313 W
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Transistor Case Style: TO-247AC
  • Number of Pins: 3
  • Current Ic @ Vce Sat: 25 A
  • Current Ic Continuous a Max: 46 A
  • Current Temperature: 25°C
  • Device Marking: SKW25N120
  • Fall Time tf: 39 ns
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Package / Case: TO-247AC
  • Power Dissipation: 313 W
  • Power Dissipation Pd: 313 W
  • Power Dissipation Ptot Max: 313 W
  • Pulsed Current Icm: 84 A
  • Rise Time: 40 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 1200 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLK 5