Datasheet GT20J321 - Toshiba IGBT, 600 V, TO-220NIS — 数据表

Toshiba GT20J321

Part Number: GT20J321

详细说明

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

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Specifications:

  • Transistor Type: IGBT
  • Max Voltage Vce Sat: 2.45 V
  • Collector-to-Emitter Breakdown Voltage: 600 V
  • Transistor Case Style: TO-220NIS
  • Case Style: TO-220NIS
  • Junction to Case Thermal Resistance A: 2.78°C/ W
  • Max Current Ic Continuous a: 20 A
  • Max Junction Temperature Tj: 150°C
  • Power Dissipation: 45 W
  • Power Dissipation Pd: 45 W
  • Pulsed Current Icm: 40 A
  • Rise Time: 40 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Typ Fall Time: 40 ns
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - SK 145/37,5 STS-220
  • Fischer Elektronik - SK 409/25,4 STS
  • Fischer Elektronik - SK 409/50,8 STS
  • Fischer Elektronik - WLPG 02
  • Multicomp - MK3306