Datasheet Inchange Semiconductor 2N7077 — 数据表

isc N-Channel MOSFET Transistor 2N7077 FEATURES Drain Current -ID=15A@ TC=25℃ Drain Source Voltage -VDSS=400V(Min) Static Drain-Source On-Resistance
-RDS(on) =0.3Ω(Max) DESCRIPTION Motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W www.iscsemi.com 1 isc N-Channel MOSFET Transistor 2N7077 ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
V(BR)DSS PARAMETER CONDITIONS MIN TYP. MAX UNIT Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 400 -V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2.0 -4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.5A -0.3 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -±100 nA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 -25 uA VSD Forward On-Voltage IS=15A; VGS= 0 0.85 -1.4 V Product Disclaimer
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