Datasheet Alpha & Omega AOP609 — 数据表

AOD609
Complementary Enhancement Mode Field Effect Transistor
General Description Features The AOD609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used in H-bridge, Inverters and other
applications. n-channel
VDS (V) = 40V, ID = 12A (VGS=10V)
RDS(ON)< 30mW (VGS=10V)
RDS(ON)< 40mW (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V)
RDS(ON)< 45mW (VGS= -10V)
RDS(ON)< 66mW (VGS= -4.5V)
100% UIS Tested!
100% Rg Tested! -RoHS Compliant
-Halogen Free* TO-252-4L
D-PAK
D1/D2 Top View Bottom View Top View
Drain Connected
to Tab D1/D2 G1
S2 S1 n-channel G1 Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter …