eGaN® FET DATASHEET EPC2361 EPC2361 – Enhancement Mode Power Transistor
VDS , 100 V
RDS(on) , 1.0 mΩ typical
ID, 101 A D Y NAR
LIMI PRE G EFFICIENT POWER CONVERSION
S HAL Description
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Application notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
OFF = 0 V (negative voltage not needed)
• Top of FET is electrically connected to source Ask a GaN
Expert Maximum Ratings
PARAMETER
VDS
ID
VGS
TJ
TSTG VALUE Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C)
Continuous (TA = 25°C) …
