PMF170XP 20 V, 1 A P-channel Trench MOSFET
29 October 2013 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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• Low RDSon
Very fast switching
Trench MOSFET technology 3. Applications
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• Relay driver
High-speed line driver
High-side loadswitch
Switching circuits 4. Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -20 V VGS gate-source voltage -12 -12 V ID drain current -1 A -175 200 mΩ VGS = -4.5 V; Tamb 25 °C [1] Static characteristics
RDSon drain-source on-state
resistance
[1] VGS = -4.5 V; ID = -1 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
2 drain 6 cm . PMF170XP Nexperia 20 V, 1 A P-channel Trench MOSFET 5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G
1 2 S SC-70 (SOT323) 017aaa094 6. Ordering information …
