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1700V Silicon Carbide MOSFETs
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VDS 1700 V ID @ 25˚C C2M0045170P Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology RDS(on) 72 A 45 mΩ N-Channel Enhancement Mode Features • • • • • • Package Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Halogen Free, RoHS Compliant TAB
Drain Benefits • • • • • Drain
(Pin 1, TAB) Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency 1
D 2 3 4
S S G Gate
(Pin 4) Applications • • • • Driver
Source
(Pin 3) 1500V Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Pulsed Power Applications Power
Source …