Datasheet Infineon IRG4PH50UD — 数据表

PD -95190 IRG4PH50UDPbF
UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features C • UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free VCES = 1200V
VCE(on) typ. = 2.78V G @VGE = 15V, IC = 24A E n-cha nn el Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-247AC Absolute Maximum Ratings
Parameter
VCES …