Datasheet Toshiba TW070J120B — 数据表

制造商Toshiba
系列TW070J120B
零件号TW070J120B
Datasheet Toshiba TW070J120B

功率SiC MOSFET

数据表

Datasheet TW070J120B
PDF, 518 Kb, 语言: en, 档案已发布: Aug, 2020, 页数: 10
MOSFETs Silicon Carbide N-Channel MOS
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)

打包

Pins3
Manufacture Package CodeTO-3P(N)
MountingThrough Hole
Width×Length×Height15.5×20.0×4.5 mm

参数化

Assembly basesJapan
Drain current36 A
Drain-Source on-resistance (Max) [|VGS|=20V]90 mΩ
Drain-Source voltage1200 V
Input capacitance (Typ.)1680 pF
JEITASC-65
PolarityN-ch

生态计划

RoHSCompliant

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