Datasheet Toshiba SSM3H137TU — 数据表

制造商Toshiba
系列SSM3H137TU
零件号SSM3H137TU
Datasheet Toshiba SSM3H137TU

小型低导通电阻MOSFET

数据表

Datasheet SSM3H137TU
PDF, 231 Kb, 语言: en, 档案已发布: Mar, 2016, 页数: 9
MOSFETs Silicon N-Channel MOS
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)

打包

Pins3
Package CodeSOT-323F
Manufacture Package CodeUFM
MountingSurface Mount
Width×Length×Height2.0×2.1×0.7 mm

参数化

AEC-Q101Qualified(*)
Application ScopeRelay Drivers
Assembly basesThailand
Drain current2.0 A
Drain-Source on-resistance (Max) [|VGS|=10V]240 mΩ
Drain-Source on-resistance (Max) [|VGS|=4.5V]280 mΩ
Drain-Source on-resistance (Max) [|VGS|=4V]295 mΩ
Drain-Source voltage34 V
FeaturesRelay Drivers
Gate threshold voltage (Max)1.7 V
Gate-Source voltage+/-20 V
GenerationU-MOSⅣ
Input capacitance (Typ.)119 pF
Internal ConnectionSingle
PolarityN-ch + Active Clamp Zener
Power Dissipation0.8 W
Total gate charge (Typ.) [VGS=10V]3.0 nC

生态计划

RoHSCompliant

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