Datasheet Toshiba XPN12006NC — 数据表

制造商Toshiba
系列XPN12006NC
零件号XPN12006NC
Datasheet Toshiba XPN12006NC

功率MOSFET(N沟道30V <VDSS≤60V)

数据表

Datasheet XPN12006NC
PDF, 574 Kb, 语言: en, 档案已发布: Jun, 2020, 页数: 10
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)

打包

Pins8
Manufacture Package CodeTSON Advance(WF)
MountingSurface Mount
Width×Length×Height3.3×3.6×0.85 mm

参数化

AEC-Q101Qualified
Application ScopeDC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers
Assembly basesJapan
Drain current20 A
Drain-Source on-resistance (Max) [|VGS|=10V]12 mΩ
Drain-Source on-resistance (Max) [|VGS|=4.5V]23.7 mΩ
Drain-Source voltage60 V
Gate threshold voltage (Max)2.5 V
Gate-Source voltage+/-20 V
GenerationU-MOSⅧ-H
Input capacitance (Typ.)1100 pF
Internal ConnectionSingle
PolarityN-ch
Power Dissipation65 W
Total gate charge (Typ.) [VGS=10V]23 nC

生态计划

RoHSCompliant