Intelligent Power Device Silicon Power MOS Integrated Circuit
TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit TPD7106F
1 channel High-Side N channel Power MOSFET Gate Driver 1. Description
TPD7106F is a 1channel high-side N channel power MOSFET gate
driver. This IC contains a charge pump circuit, allowing easy
configuration of a high-side switch for large-current applications. TPD7106F SSOP16-P-225-0.65B 2. Applications
● Junction Boxes for Automotive.
Power distribution modules for Automotive.
Semiconductor relays. 3. Features
● AEC-Q100 qualified.
Built in the charge pump circuit (Charge pump capacitor is external).
Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is
Built in the protection for reverse connection of power supply.
Built in the diagnosis output for under voltage of Charge pump circuit.
SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. Start of commercial production …