Datasheet Infineon IRLHM620 — 数据表

IRLHM620PbF
HEXFET® Power MOSFET
VDSS 20 V VGS ±12 V RDS(on) max
(@ VGS = 4.5V)
(@ VGS = 2.5V) 2.5     m 3.5 Qg (typical)
ID
(@TC (Bottom) = 25°C) 52 nC 40 A PQFN 3.3 x 3.3 mm Applications
 Battery Operated DC Motor Inverter MOSFET
 Secondary Side Synchronous Rectification MOSFET
Features
Low RDSon (< 2.5m)
Low Thermal Resistance to PCB ( …