Datasheet Analog Devices ADuM4138 — 数据表

Data Sheet High Voltage, Isolated IGBT Gate Driver
with Isolated Flyback Controller
ADuM4138 FEATURES
6 A (typical) peak drive output capability
Internal turn off NFET, on resistance: 109 °C
W
Ω Vpd(m) VIORM × 1.2 = Vpd(m), tini = 60 sec, tm = 10 sec,
partial discharge < 5 pC
1.2 µs rise time, 50 µs, 50% fall time in air to the
preferred sequence
VPEAK = 12.8 kV, 1.2 µs rise time, 50 µs, 50% fall time
VPEAK = 12.8 kV, 1.2 µs rise time, 50 µs, 50% fall time
Maximum value allowed in the event of a
failure (see Figure 3) Surge Isolation Voltage Basic
Surge Isolation Voltage Reinforced
Safety Limiting Values
Maximum Junction Temperature
Total Power Dissipation at TA = 25°C
Insulation Resistance at TS Voltage between the input and output (VIO) = 500 V 2.5 RECOMMENDED OPERATING CONDITIONS
Table 7. 2.0 Parameter
Operating Junction Temperature Range
Supply Voltages
VDD1 Referenced to GND1 …