Datasheet Analog Devices ADuM4137 — 数据表

Data Sheet High Voltage, Isolated IGBT Gate Driver
with Fault Detection
ADuM4137 FEATURES
6 A peak drive output capability
Internal turn off NFET, on resistance: 109 °C
W
Ω Vpd(m) VIORM × 1.2 = Vpd(m), tini = 60 sec, tm = 10 sec,
partial discharge < 5 pC
1.2 µs rise time, 50 µs, 50% fall time in air to the
preferred sequence
VPEAK = 12.8 kV, 1.2 µs rise time, 50 µs, 50% fall time
VPEAK = 12.8 kV, 1.2 µs rise time, 50 µs, 50% fall time
Maximum value allowed in the event of a
failure (see Figure 3) Surge Isolation Voltage Basic
Surge Isolation Voltage Reinforced
Safety Limiting Values
Maximum Junction Temperature
Total Power Dissipation at TA = 25°C
Insulation Resistance at TS Voltage between the input and output (VIO) = 500 V RECOMMENDED OPERATING CONDITIONS 2.5 Table 7. 2.0 Parameter
Operating Temperature Range (TJ)
Supply Voltages
VDD1 1
VDD2 2 1.5 1.0 1 …