Datasheet Diodes DGTD65T40S2PT — 数据表
| 制造商 | Diodes |
| 系列 | DGTD65T40S2PT |
| 零件号 | DGTD65T40S2PT |
TO650中的650V场截止IGBT
数据表
Datasheet DGTD65T40S2PT
PDF, 1.4 Mb, 语言: en, 文件上传: Mar 26, 2019, 页数: 9
650V Field Stop IGBT In TO247
650V Field Stop IGBT In TO247
从文件中提取
详细说明
DGTD65T40S2PT使用先进的场截止沟槽IGBT技术生产，具有出色的质量和高开关性能。
参数化
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
| Input Type | Standard |
| Gate Charge | 60 nC |
| Reverse Recovery Time (trr) | 60 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3  |
| Product Status | Obsolete |
| Packaging | Tube |
打包
| Package | TO247 (Type MC) |
参数化
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.4 mJ |
| EON typ @ +25°C | 0.5 mJ |
| IC @ +100°C | 40 A |
| IC @ +25°C | 80 A |
| Power Dissipation @ TC = +25°C | 230 W |
| VCE(sat) max @ +25°C | 2.3 V |
| VCE(sat) typ @ +25°C | 1.8 V |
| VCES | 650 V |
制造商分类
- Discrete > IGBTs