Datasheet Diodes DGTD65T15H2TF — 数据表
| 制造商 | Diodes |
| 系列 | DGTD65T15H2TF |
| 零件号 | DGTD65T15H2TF |
650V场截止IGBT
数据表
Datasheet DGTD65T15H2TF
PDF, 1.8 Mb, 语言: en, 文件上传: Mar 26, 2019, 页数: 9
650V Field Stop IGBT
650V Field Stop IGBT
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详细说明
DGTD65T15H2TF使用先进的场截止沟槽IGBT技术生产，该技术具有高性能，出色的质量和高耐用性。
参数化
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 48 W |
| Input Type | Standard |
| Gate Charge | 61 nC |
| Reverse Recovery Time (trr) | 150 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab  |
| Product Status | Active |
| Packaging | Tube |
打包
| Package | ITO220AB (Type MC) |
参数化
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.086 mJ |
| EON typ @ +25°C | 0.27 mJ |
| IC @ +100°C | 15 A |
| IC @ +25°C | 30 A |
| Power Dissipation @ TC = +25°C | 48 W |
| Short Circuit | 5 µs |
| VCE(sat) max @ +25°C | 2 V |
| VCE(sat) typ @ +25°C | 1.65 V |
| VCES | 650 V |
制造商分类
- Discrete > IGBTs