PD -97034 IRF4905SPbF
IRF4905LPbF
HEXFET® Power MOSFET Features
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O O Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free D VDSS = -55V
RDS(on) = 20mΩ G ID = -42A S Description D Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications. D G D S
G D2Pak
IRF4905SPbF Absolute Maximum Ratings G D S Gate Drain Source Parameter Max.
-70 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) -44 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) -42 Pulsed Drain Current c Linear Derating Factor
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