Datasheet Fujitsu MB85R8M2T — 数据表

FUJITSU SEMICONDUCTOR
DATA SHEET DS501-00054-1v0-E Memory FRAM 8 M (512 K Г— 16) Bit
MB85R8M2T
пЃ® DESCRIPTIONS
The MB85R8M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words
Г— 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process
technologies.
The MB85R8M2T is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R8M2T can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM. The
MB85R8M2T uses a pseudo-SRAM interface. пЃ® FEATURES Bit configuration Read/write endurance Data retention Operating power supply voltage Low power operation : 524,288 words Г— 16 bits
: 1013 times / 16 bits
: 10 years ( + 85 В°C), 95 years ( + 55 В°C), over 200 years ( + 35 В°C)
: 1.8 V to 3.6 V
: Operating power supply current 20 mA (Max)
Standby current 300 ОјA (Max)
Sleep current 40 ОјA (Max) Operation ambient temperature range : -40 В°C to + 85 В°C Package
: 48-pin plastic FBGA (BGA-48P-M24)
RoHS compliant Copyright 2018 FUJITSU SEMICONDUCTOR LIMITED
2018.05 MB85R8M2T
пЃ® PIN ASSIGNMENTS 1 2 3 4 5 6 A /LB /OE A0 A1 A2 /ZZ B I/O8 /UB A3 A4 /CE I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 A17 A7 I/O3 VDD E VDD I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 /WE I/O7 H A18 A8 A9 A10 A11 NC TOP VIEW 2 DS501-00054-1v0-E MB85R8M2T
пЃ® PIN DESCRIPTIONS
Pin Number …