Datasheet Texas Instruments LMG1210RVRT — 数据表

制造商Texas Instruments
系列LMG1210
零件号LMG1210RVRT
Datasheet Texas Instruments LMG1210RVRT

具有可调死区时间19-WQFN的200V,1.5A / 3A半桥GaN驱动器-40至125

数据表

LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Kb, 档案已发布: Feb 14, 2018
从文件中提取

价格

状态

Lifecycle StatusPreview (Device has been announced but is not in production. Samples may or may not be available)
Manufacture's Sample AvailabilityNo

打包

Pin19
Package TypeRVR
Package QTY250
CarrierSMALL T&R
Width (mm)4
Length (mm)3
Thickness (mm)0.75
Mechanical Data下载

参数化

Bus Voltage200 V
Driver ConfigurationHalf Bridge
Fall Time0.5 ns
Input ThresholdTTL
Input VCC(Max)18 V
Input VCC(Min)6 V
Number of Channels2
Operating Temperature Range-40 to 125 C
Package GroupWQFN
Package Size: mm2:W x L19WQFN: 12 mm2: 4 x 3(WQFN) PKG
Peak Output Current3 A
Power SwitchMOSFET,GaNFET
Prop Delay10 ns
RatingCatalog
Rise Time0.5 ns

生态计划

RoHSSee ti.com

设计套件和评估模块

  • Evaluation Modules & Boards: LMG1210EVM-012
    LMG1210 Half-bridge Open Loop Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

应用须知

  • Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN Driver
    PDF, 139 Kb, 档案已发布: Feb 14, 2018
    Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead

模型线

系列: LMG1210 (3)

制造商分类

  • Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers