Datasheet Texas Instruments CSD87503Q3E — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD87503Q3E |
| 零件号 | CSD87503Q3E |
30V双路N沟道MOSFET，共源8-VSON -55至150
数据表
CSD87503Q3E 30-V N-Channel NexFETв„ў Power MOSFETs datasheet
PDF, 480 Kb, 档案已发布: Sep 13, 2017
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状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | DTD |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 87503E |
| Width (mm) | 3.3 |
| Length (mm) | 3.3 |
| Thickness (mm) | 1 |
| Mechanical Data | 下载 |
参数化
| Configuration | Dual Common Source |
| ID, package limited | 10 A |
| IDM, Max Pulsed Drain Current(Max) | 89 A |
| Package | SON3x3 mm |
| QG Typ | 13.4 nC |
| QGD Typ | 5.8 nC |
| RDS(on) Typ at VGS=4.5V | 17.3 mOhm |
| Rds(on) Max at VGS=10V | 16.9 mOhms |
| Rds(on) Max at VGS=4.5V | 21.9 mOhms |
| VDS | 30 V |
| VGS | 20 V |
| VGSTH Typ | 1.7 V |
生态计划
| RoHS | Compliant |
模型线
系列: CSD87503Q3E (2)
- CSD87503Q3E CSD87503Q3ET
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor