Order
Now Product
Folder Support &
Community Tools &
Software Technical
Documents CSD22206W
SLPS689 – MAY 2017 CSD22206W –8-V P-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Resistance
Small Footprint 1.5 mm Г— 1.5 mm
Lead Free
Gate ESD Protection
RoHS Compliant
Halogen Free
Gate-Source Voltage Clamp TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage Load Switch Applications
Battery Management
Battery Protection S S QTY CSD22206W 3000 nC
6.8 VGS = –4.5 V 4.7 mΩ –0.7 V MEDIA PACKAGE SHIP 7-Inch Reel 1.50-mm × 1.50-mm
Wafer BGA
Package Tape
and
Reel 250 VALUE UNIT VDS Drain-to-Source Voltage –8 V VGS Gate-to-Source Voltage –6 V Continuous Drain Current(1) –5 A ID Pulsed Drain Current(2) PD Power Dissipation TJ,
Tstg Operating Junction,
Storage Temperature –108 A 1.7 W –55 to 150 В°C (1) Device operating at a temperature of 105В°C. …
