TC6320
N-Channel and P-Channel Enhancement-Mode MOSFET Pair
Features General Description The TC6320 consists of high-voltage, low-threshold
N-channel and P-channel MOSFETs in 8-lead SOIC
and DFN packages. Both MOSFETs have integrated
gate-to-source resistors and gate-to-source Zener
diode clamps which are desired for high-voltage pulser
applications. It is a complimentary, high-speed,
high-voltage, gate-clamped N-channel and P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and a well-proven silicon gate
manufacturing process. This combination produces a
device with the power handling capabilities of bipolar
transistors and with the high input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally
induced secondary breakdown. Integrated Gate-to-source Resistor
Integrated Gate-to-source Zener Diode
Low Threshold
Low On-resistance
Low Input Capacitance
Fast Switching Speeds …