Datasheet Microchip TC2320 — 数据表

TC2320
N-Channel and P-Channel Enhancement-Mode Dual MOSFET
Features General Description The TC2320 consists of a high-voltage, low-threshold
N-channel and P-channel MOSFET in an 8-Lead SOIC
package. This Enhancement-mode (normally-off)
transistor uses an advanced vertical DMOS structure
and a well-proven silicon gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown. Low Threshold
Low On-resistance
Low Input Capacitance
Fast Switching Speeds
Free from Secondary Breakdown
Low Input and Output Leakage
Independent, Electrically Isolated N-channel and
P-channel Applications Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance …