Datasheet IRFL014NPBF - International Rectifier MOSFET, N, 55 V, 1.9 A, SOT-223 — 数据表

详细说明

Manufacturer: International Rectifier

Description: MOSFET, N, 55 V, 1.9 A, SOT-223

Download Data Sheet

Docket:
PD- 92003A
HEXFET® Power MOSFET
l l l l l l
IRFL014N
VDSS = 55V RDS(on) = 0.16

Specifications:

• Avalanche Single Pulse Energy Eas: 48mJ
• Capacitance Ciss Typ: 190 pF
• Charge Qrr @ Tj = 25В°C Typ: 64nC
• Continuous Drain Current Id: 2.7 A
• Current Iar: 1.7 A
• Current Id Max: 1.9 A
• Current Idss Max: 1 µA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 55 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Fall Time tf: 3.3 ns
• Full Power Rating Temperature: 25°C
• Gfs Min: 1.6A/V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 120°C/W
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 160 MOhm
• On State Resistance Max: 160 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 1 W
• Power Dissipation Ptot Max: 2.1 W
• Power Dissipation on 1 Sq.

  PCB: 1 W

• Pulse Current Idm: 15 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Y-Ex

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A
• Roth Elektronik - RE901