Datasheet Texas Instruments SN74CBT162292 — 数据表

制造商Texas Instruments
系列SN74CBT162292
Datasheet Texas Instruments SN74CBT162292

具有内部下拉电阻的12位1至2 FET多路复用器/多路解复用器

数据表

12-Bit 1-of-2 FET Multiplexer/Demultiplexer With Internal Pulldown Resistors datasheet
PDF, 343 Kb, 修订版: E, 档案已发布: Oct 23, 2000
从文件中提取

价格

状态

SN74CBT162292DGGRSN74CBT162292DL
Lifecycle StatusActive (Recommended for new designs)Active (Recommended for new designs)
Manufacture's Sample AvailabilityNoNo

打包

SN74CBT162292DGGRSN74CBT162292DL
N12
Pin5656
Package TypeDGGDL
Industry STD TermTSSOPSSOP
JEDEC CodeR-PDSO-GR-PDSO-G
Package QTY200020
CarrierLARGE T&RTUBE
Device MarkingCBT162292CBT162292
Width (mm)6.17.49
Length (mm)1418.41
Thickness (mm)1.152.59
Pitch (mm).5.635
Max Height (mm)1.22.79
Mechanical Data下载下载

参数化

Parameters / ModelsSN74CBT162292DGGR
SN74CBT162292DGGR
SN74CBT162292DL
SN74CBT162292DL
Additional FeaturesPowered off protection,Internal pull-down resistors,Make-before-breakPowered off protection,Internal pull-down resistors,Make-before-break
Bandwidth, MHz200200
Bandwidth(Max), MHz200200
Configuration2:1 SPDT2:1 SPDT
Input/Ouput Voltage(Max), V5.55.5
Input/Output Continuous Current(Max), mA128128
Input/Output OFF-state Capacitance(Typ), pF88
Number of Channels1212
OFF-state leakage current(Max), µA55
ON-state leakage current(Max), µA55
Operating Temperature Range, C-40 to 85-40 to 85
Package GroupTSSOPSSOP
Package Size: mm2:W x L, PKG56TSSOP: 113 mm2: 8.1 x 14(TSSOP)56SSOP: 191 mm2: 10.35 x 18.42(SSOP)
RatingCatalogCatalog
Ron(Max), Ohms6363
Ron(Typ), Ohms3737
Supply Current(Max), uA33
Supply Range, Max5.55.5
VIH(Min), V22
VIL(Max), V0.80.8
Vdd(Max), V5.55.5
Vdd(Min), V44
Vss(Max), VN/AN/A
Vss(Min), VN/AN/A

生态计划

SN74CBT162292DGGRSN74CBT162292DL
RoHSCompliantCompliant

应用须知

  • Flexible Voltage-Level Translation With CBT Family Devices
    PDF, 40 Kb, 档案已发布: Jul 20, 1999
    Voltage translation between buses with incompatible logic levels can be accomplished using Texas Instruments (TI) translation-voltage clamps (TVC) or standard crossbar technology (CBT) devices. CBT devices in this application offer flexibility in designs, protection of circuits that are sensitive to high-state voltage-level overshoots, and cost efficiency.
  • 5-V To 3.3-V Translation With the SN74CBTD3384 (Rev. B)
    PDF, 35 Kb, 修订版: B, 档案已发布: Mar 1, 1997
    The emergence of low-voltage technology required existing 5-V systems to interact with 3.3-V systems. Compatibility issues of mixed-mode operation created the need for 5-V to 3.3-V translation. Buffers and transceivers serve as effective translators. While providing additional drive, these devices also add propagation delay and require directional control. In cases where additional drive is not
  • 3.3-V to 2.5-V Translation with Texas Instruments Crossbar Technology (Rev. A)
    PDF, 32 Kb, 修订版: A, 档案已发布: Apr 3, 1998
  • Bus FET Switch Solutions for Live Insertion Applications
    PDF, 300 Kb, 档案已发布: Feb 7, 2003
    In today?s competitive computing and networking industry, any equipment downtime due to component interconnects or bus failures impedes communication, hinders productivity and hampers financial growth. In recognizing this increasingly costly unplanned downtime, the industry introduced live-insertion technology to minimize the impact of any such failures. The live-insertion feature enables a networ
  • 16-Bit Widebus Logic Families in 56-Ball 0.65-mm Pitch Very Thin Fine-Pitch BGA (Rev. B)
    PDF, 895 Kb, 修订版: B, 档案已发布: May 22, 2002
    TI?s 56-ball MicroStar Jr.E package registered under JEDEC MO-225 has demonstrated through modeling and experimentation that it is an optimal solution for reducing inductance and capacitance improving thermal performance and minimizing board area usage in integrated bus functions. Multiple functions released in the 56-ball MicroStar Jr.E package have superior performance characteristics compa

模型线

系列: SN74CBT162292 (2)

制造商分类

  • Semiconductors> Switches and Multiplexers> Analog Switches/Muxes