Datasheet Texas Instruments ISO5851QDWRQ1 — 数据表

制造商Texas Instruments
系列ISO5851-Q1
零件号ISO5851QDWRQ1
Datasheet Texas Instruments ISO5851QDWRQ1

具有有源保护功能的汽车类高CMTI 2.5A / 5A隔离式IGBT,MOSFET栅极驱动器,具有16-SOIC -40至125

数据表

ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet
PDF, 1.5 Mb, 修订版: A, 档案已发布: Dec 22, 2016
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin16
Package TypeDW
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY2000
CarrierLARGE T&R
Device MarkingISO5851Q
Width (mm)7.5
Length (mm)10.3
Thickness (mm)2.35
Pitch (mm)1.27
Max Height (mm)2.65
Mechanical Data下载

参数化

DIN V VDE V 0884-10 Working Voltage2121 Vpk
DIN V VDE V 0884-10 Transient Overvoltage Rating8000 Vpk
Enable/Disable FunctionN/A
Input VCC(Max)5.5 V
Input VCC(Min)3 V
Isolation Rating5700 Vrms
Number of Channels1
Operating Temperature Range-40 to 125 C
Output VCC/VDD(Max)30 V
Output VCC/VDD(Min)15 V
Package GroupSOIC
Package Size: mm2:W x L16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG
Peak Output Current5 A
Power SwitchIGBT
Prop Delay110 ns
Prop Delay(Max)110 ns

生态计划

RoHSCompliant

设计套件和评估模块

  • Evaluation Modules & Boards: ISO5851EVM
    ISO5851 Evaluation Module (EVM)
    Lifecycle Status: Active (Recommended for new designs)

模型线

系列: ISO5851-Q1 (2)

制造商分类

  • Semiconductors > Isolation > Isolated Gate Driver