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SNOSB66B – AUGUST 2011 – REVISED NOVEMBER 2014 EMB1412 MOSFET Gate Driver
1 Features 3 Description The EMB1412 MOSFET gate driver provides high
peak gate drive current in 8-lead exposed-pad
VSSOP package, with improved power dissipation
required for high frequency operation. The compound
output driver stage includes MOS and bipolar
transistors operating in parallel that together sink
more than 7-A peak from capacitive loads. Combining
the unique characteristics of MOS and bipolar
devices reduces drive current variation with voltage
and temperature. Under-voltage lockout protection is
provided to prevent damage to the MOSFET due to
insufficient gate turn-on voltage. The EMB1412
provides both inverting and non-inverting inputs to
satisfy requirements for inverting and non-inverting
gate drive with a single device type. 1 Compound CMOS and Bipolar Outputs Reduce
Output Current Variation …
