Datasheet Texas Instruments CSD83325L — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD83325L |
CSD83325L，双N沟道NexFET™功率MOSFET
数据表
CSD83325L 12-V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 1.2 Mb, 修订版: B, 档案已发布: Feb 16, 2017
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状态
| CSD83325L | CSD83325LT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD83325L | CSD83325LT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | YJE | YJE |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 83325L | 83325L |
| Width (mm) | 2.16 | 2.16 |
| Length (mm) | 1.11 | 1.11 |
| Thickness (mm) | .2 | .2 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD83325L | CSD83325LT |
|---|---|---|
| Configuration | Dual | Dual |
| IDM, Max Pulsed Drain Current(Max), A | 52 | 52 |
| Package, mm | LGA | LGA |
| QG Typ, nC | 8.4 | 8.4 |
| QGD Typ, nC | 1.9 | 1.9 |
| RDS(on) Typ at VGS=4.5V, mOhm | 4.9 | 4.9 |
| Rds(on) Max at VGS=4.5V, mOhms | 5.9 | 5.9 |
| VDS, V | 12 | 12 |
| VGS, V | 10 | 10 |
| VGSTH Typ, V | 0.95 | 0.95 |
生态计划
| CSD83325L | CSD83325LT | |
|---|---|---|
| RoHS | Compliant | Compliant |
模型线
系列: CSD83325L (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor