Datasheet Texas Instruments CSD19536KTT — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19536KTT |
CSD19536KTT 100 V N沟道NexFET –功率MOSFET
数据表
CSD19536KTT 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 915 Kb, 修订版: B, 档案已发布: Aug 16, 2016
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状态
| CSD19536KTT | CSD19536KTTT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD19536KTT | CSD19536KTTT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 3 | 3 |
| Package Type | KTT | KTT |
| Industry STD Term | TO-263 | TO-263 |
| JEDEC Code | R-PSFM-G | R-PSFM-G |
| Package QTY | 500 | 50 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD19536KTT | CSD19536KTT |
| Width (mm) | 8.41 | 8.41 |
| Length (mm) | 10.18 | 10.18 |
| Thickness (mm) | 4.44 | 4.44 |
| Pitch (mm) | 2.54 | 2.54 |
| Max Height (mm) | 4.83 | 4.83 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD19536KTT | CSD19536KTTT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 272 | 272 |
| ID, package limited, A | 200 | 200 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | D2PAK | D2PAK |
| QG Typ, nC | 118 | 118 |
| QGD Typ, nC | 17 | 17 |
| Rds(on) Max at VGS=10V, mOhms | 2.4 | 2.4 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 2.5 | 2.5 |
生态计划
| CSD19536KTT | CSD19536KTTT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
模型线
系列: CSD19536KTT (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor