Datasheet Texas Instruments CSD18531Q5A — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD18531Q5A |
60V N沟道NexFET功率MOSFET，CSD18531Q5A
数据表
CSD18531Q5A 60-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 369 Kb, 修订版: G, 档案已发布: Aug 16, 2017
从文件中提取
状态
| CSD18531Q5A | CSD18531Q5AT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD18531Q5A | CSD18531Q5AT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQJ | DQJ |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD18531 | CSD18531 |
| Width (mm) | 6 | 6 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD18531Q5A | CSD18531Q5AT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 134 | 134 |
| IDM, Max Pulsed Drain Current(Max), A | 300 | 300 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 36 | 36 |
| QGD Typ, nC | 5.9 | 5.9 |
| RDS(on) Typ at VGS=4.5V, mOhm | 4.4 | 4.4 |
| Rds(on) Max at VGS=10V, mOhms | 4.6 | 4.6 |
| Rds(on) Max at VGS=4.5V, mOhms | 5.8 | 5.8 |
| VDS, V | 60 | 60 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.8 | 1.8 |
生态计划
| CSD18531Q5A | CSD18531Q5AT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD18531Q5A (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor