Datasheet Texas Instruments CSD18503Q5A — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD18503Q5A |

40V N沟道NexFET™功率MOSFET,CSD18503Q5A
数据表
CSD18503Q5A 40 V N-Channel NexFET Power MOSFET datasheet
PDF, 374 Kb, 修订版: C, 档案已发布: Jun 4, 2015
从文件中提取
状态
| CSD18503Q5A | CSD18503Q5AT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD18503Q5A | CSD18503Q5AT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQJ | DQJ |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD18503 | CSD18503 |
| Width (mm) | 6 | 6 |
| Length (mm) | 4.9 | 4.9 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD18503Q5A![]() | CSD18503Q5AT![]() |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 120 | 120 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 26 | 26 |
| QGD Typ, nC | 4.3 | 4.3 |
| RDS(on) Typ at VGS=4.5V, mOhm | 4.7 | 4.7 |
| Rds(on) Max at VGS=10V, mOhms | 4.3 | 4.3 |
| Rds(on) Max at VGS=4.5V, mOhms | 6.2 | 6.2 |
| VDS, V | 40 | 40 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.8 | 1.8 |
生态计划
| CSD18503Q5A | CSD18503Q5AT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD18503Q5A (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor